Journalartikel - Wissenschaftlicher Artikel | 1997 | Peer reviewed

Metal-Oxide-Semiconductor-Compatible Silicon Based Single Electron Transistor Using Bonded and Etched Back Silicon on Insulator Material

Autor*innen

Köster, Thomas ; Hadam, Birgit ; Hofmann, Kurt ; Gondermann, J. ; Stein, Josef ; Hu, S. ; Altmeyer, Stefan ; Spangenberg, Bernd ; Kurz, Heinrich

Zeitschrift

Journal of vacuum science and technology

DOI

10.1116/1.589739

Weitere Details

Sprache

englisch

Darstellungsform

Text

Band

Ausgabe

Seitenbereich

2836 - 2839

Zitierstile

Köster, T., Hadam, B., Hofmann, K., Gondermann, J., Stein, J., Hu, S., … Kurz, H. (1997). Metal-Oxide-Semiconductor-Compatible Silicon Based Single Electron Transistor Using Bonded and Etched Back Silicon on Insulator Material. Journal of Vacuum Science and Technology, 15(6), 2836–2839. doi:10.1116/1.589739

In die Zwischenablage kopieren

Köster, T., Hadam, B., Hofmann, K., Gondermann, J., Stein, J., Hu, S., Altmeyer, S., Spangenberg, B. and Kurz, H., 1997. Metal-Oxide-Semiconductor-Compatible Silicon Based Single Electron Transistor Using Bonded and Etched Back Silicon on Insulator Material. Journal of vacuum science and technology, 15(6), pp.2836–2839.

In die Zwischenablage kopieren

Köster, Thomas u. a. 1997. Metal-Oxide-Semiconductor-Compatible Silicon Based Single Electron Transistor Using Bonded and Etched Back Silicon on Insulator Material. Journal of vacuum science and technology 15, 6, 2836–2839.

American Psychological Association 6th edition (DOI)

Anglia Ruskin University - Harvard

Gesellschaft für Bildung und Forschung in Europa - Harvard