Journalartikel - Wissenschaftlicher Artikel | 1998 | Peer reviewed

Direct Patterning of Single Electron Tunneling Transistors by High Resolution Electron Beam Lithography on Highly Doped Molecular Beam Epitaxy Grown Silicon Films

Autor*innen

Koester, Thomas ; Goldschmidtboeing, Frank ; Hadam, Birgit ; Stein, Josef ; Altmeyer, Stefan ; Spangenberg, Bernd ; Kurz, Heinrich ; Neumann, Robert ; Brunner, Karl ; Abstreiter, Gerhard

Zeitschrift

Journal of vacuum science and technology

DOI

10.1116/1.590412

Weitere Details

Sprache

englisch

Darstellungsform

Text

Band

Ausgabe

Seitenbereich

3804 - 3807

Zitierstile

Koester, T., Goldschmidtboeing, F., Hadam, B., Stein, J., Altmeyer, S., Spangenberg, B., … Abstreiter, G. (1998). Direct Patterning of Single Electron Tunneling Transistors by High Resolution Electron Beam Lithography on Highly Doped Molecular Beam Epitaxy Grown Silicon Films. Journal of Vacuum Science and Technology, 16(6), 3804–3807. doi:10.1116/1.590412

In die Zwischenablage kopieren

Koester, T., Goldschmidtboeing, F., Hadam, B., Stein, J., Altmeyer, S., Spangenberg, B., Kurz, H., Neumann, R., Brunner, K. and Abstreiter, G., 1998. Direct Patterning of Single Electron Tunneling Transistors by High Resolution Electron Beam Lithography on Highly Doped Molecular Beam Epitaxy Grown Silicon Films. Journal of vacuum science and technology, 16(6), pp.3804–3807.

In die Zwischenablage kopieren

Koester, Thomas u. a. 1998. Direct Patterning of Single Electron Tunneling Transistors by High Resolution Electron Beam Lithography on Highly Doped Molecular Beam Epitaxy Grown Silicon Films. Journal of vacuum science and technology 16, 6, 3804–3807.

American Psychological Association 6th edition (DOI)

Anglia Ruskin University - Harvard

Gesellschaft für Bildung und Forschung in Europa - Harvard