Journalartikel - Wissenschaftlicher Artikel | 1999 | Peer reviewed

Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material

Autor*innen

Koester, Thomas ; Goldschmidtboeing, Frank ; Hadam, Birgit ; Stein, Josef ; Altmeyer, Stefan ; Spangenberg, Bernd ; Kurz, Heinrich ; Neumann, Robert ; Brunner, Karl ; Abstreiter, Gerd

Zeitschrift

Japanese journal of applied physics

DOI

10.1143/JJAP.38.465

Weitere Details

Sprache

englisch

Darstellungsform

Text

Band

Ausgabe

Seitenbereich

465 - 468

Schlüsselwörter

BESOI , Coulomb Blockade , Electron Beam Lithography , Molecular Beam Epitaxy , Silicon , Single Electron Tunneling Transistors

Zitierstile

Koester, T., Goldschmidtboeing, F., Hadam, B., Stein, J., Altmeyer, S., Spangenberg, B., … Abstreiter, G. (1999). Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material. Japanese Journal of Applied Physics, 38(1S), 465–468. doi:10.1143/JJAP.38.465

In die Zwischenablage kopieren

Koester, T., Goldschmidtboeing, F., Hadam, B., Stein, J., Altmeyer, S., Spangenberg, B., Kurz, H., Neumann, R., Brunner, K. and Abstreiter, G., 1999. Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material. Japanese journal of applied physics, 38(1S), pp.465–468.

In die Zwischenablage kopieren

Koester, Thomas u. a. 1999. Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material. Japanese journal of applied physics 38, 1S, 465–468.

American Psychological Association 6th edition (DOI)

Anglia Ruskin University - Harvard

Gesellschaft für Bildung und Forschung in Europa - Harvard